Publications

Complete list of research contributions

39
Total Publications
254
Total Citations
24
Journal Articles
7
Book Chapters
8
Conference Papers

Journal Articles (24)

[39]
Mohd Zeeshan and I. Mal and BK Mani
Promising High Temperature Thermoelectric Performance of Alkali Metal-Based Zintl Phases X2AgY (X = Na, K; Y = Sb, Bi): Insights From First-Principles Studies
ACS Applied Energy Materials
Year: 2025 | Citations: 4
[38]
N. Jain, I. Mal, S. Singh, and D. P. Samajdar
Photovoltaic functionality assessment of InPBi-based solar cells using a combination of density functional theory and finite element method analysis
Solar Energy
Year: 2025 | Citations: 0
[37]
I. Mal and Milan Kočí and Paolo Nicolini and Prokop Hapala
GridFF: Efficient Simulation of Organic Molecules on Rigid Substrates
Journal of Chemical Theory and Computation
Year: 2025 | Citations: 0
[36]
Shivani Kumawat and Chandan Kumar Vishwakarma and Mohd Zeeshan and I. Mal and Sunil Kumar and BK Mani
Emergence of half-metallic ferromagnetism and valley polarization in transition metal substituted WSTe monolayer
Physical Review Materials
Year: 2025 | Citations: 3
[35]
Mohd Zeeshan and I. Mal and Shivani Kumawat and Chandan Kumar Vishwakarma and BK Mani
Ultralow lattice thermal conductivity in K2AuBi and its thermoelectric properties
Year: 2024 | Citations: 1
[34]
N. Jain, I. Mal, T. Hidouri, and D. P. Samajdar
Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing
Optical and Quantum Electronics
Year: 2024 | Citations: 0
[33]
N. Jain, I. Mal, D. P. Samajdar, and N. Bagga
Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k·p approach
Materials Science in Semiconductor Processing
Year: 2022 | Citations: 4
[32]
I. Mal and D. P. Samajdar
Investigation of optoelectronic and thermoelectric properties of InAsBi for LWIR applications: A first principles and k dot p study
Materials Science in Semiconductor Processing
Year: 2022 | Citations: 7
[31]
I. Mal and D. P. Samajdar
InPNBi/InP heterostructures for optoelectronic applications: A k‧p investigation
Materials Science in Semiconductor Processing
Year: 2022 | Citations: 4
[30]
I. Mal, R. K. Mahato, V. Tiwari, and D. P. Samajdar
First principle studies on the structural, thermodynamic and optoelectronic properties of Boron Bismuth: A promising candidate for mid-infrared optoelectronic applications
Materials Science in Semiconductor Processing
Year: 2021 | Citations: 16
[29]
V. Tiwari, I. Mal, S. K. Agnihotri, and D. P. Samajdar
First principle studies on the structural and optoelectronic properties of boron antimonide: A promising candidate for photovoltaic applications
Materials Science in Semiconductor Processing
Year: 2021 | Citations: 13
[28]
I. Mal and D. P. Samajdar
InSbNBi/InSb heterostructures for long wavelength infrared photodetector applications: A 16 band k·p study
Journal of Applied Physics
Year: 2020 | Citations: 10
[27]
T. Hidouri, M. Biswas, I. Mal, S. Nasr, S. Chakrabarti, D. P. Samajdar, and F. Saidi
Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect
Solar Energy
Year: 2020 | Citations: 14
[26]
T. Hidouri, S. Nasr, I. Mal, D. P. Samajdar, F. Saidi, R. Hamila, and H. Maaref
BGaAs strain compensation layer in novel BGaAs/InGaAs/BGaAs heterostructure: Exceptional tunability
Applied Surface Science
Year: 2020 | Citations: 7
[25]
I. Mal, D. P. Panda, B. Tongbram, S. Chakrabarti, and D. P. Samajdar
An Analytical Approach to Study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots
IEEE Transactions on Nanotechnology
Year: 2020 | Citations: 5
[24]
D. Roy, I. Mal, and D. P. Samajdar
Use of Parameter Extraction Techniques for the Evaluation of the Performance of CdTe Based Solar Array
Advanced Science, Engineering and Medicine
Year: 2019 | Citations: 0
[23]
I. Mal and D. P. Samajdar
Influence of Hydrostatic Pressure on the Performance of GaAsSbN/GaAs Quantum Well Based Optoelectronic Devices
Sensor Letters
Year: 2019 | Citations: 1
[22]
T. Hidouri, I. Mal, D. P. Samajdar, F. Saidi, and T. D. Das
Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots
Superlattices and Microstructures
Year: 2019 | Citations: 11
[21]
I. Mal, J. Jayarubi, S. Das, A. S. Sharma, A. J. Peter, and D. P. Samajdar
Hydrostatic pressure dependent optoelectronic properties of InGaAsN/GaAs spherical quantum dots for laser diode applications
Physica Status Solidi (b)
Year: 2019 | Citations: 29
[20]
I. Mal, D. P. Samajdar, and A. J. Peter
Theoretical studies on band structure and optical gain of GaInAsN/GaAs cylindrical quantum dot
Superlattices and Microstructures
Year: 2018 | Citations: 21
[19]
A. Hazra, I. Mal, D. P. Samajdar, and T. D. Das
Analytical modelling of organic solar cells with scattering interface
Optik
Year: 2018 | Citations: 5
[18]
I. Mal, D. P. Panda, B. Tongbram, D. P. Samajdar, and S. Chakrabarti
Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots
Journal of Applied Physics
Year: 2018 | Citations: 20
[17]
I. Mal, D. P. Samajdar, and T. D. Das
Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs₁₋ₓ₋yNₓSby alloys and GaAs₁₋ₓ₋yNₓSby/GaAs quantum wells calculated using k· p Hamiltonian
Superlattices and Microstructures
Year: 2017 | Citations: 21
[16]
I. Mal, D. P. Samajdar, and T. D. Das
Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k· p Hamiltonian
Superlattices and Microstructures
Year: 2017 | Citations: 27

Book Chapters (7)

[15]
N. Jain, I. Mal, and D. P. Samajdar
Investigation of Optoelectronic Performance of InAsNBi for Infrared Detection
Tailored Functional Materials. Springer Proceedings in Materials
Year: 2022 | Citations: 0
[14]
C. Rajan, D. P. Samajdar, and I. Mal
First Principles Study of Structural and Optical Properties of InP and InP₁₋ₓNₓ
Tailored Functional Materials. Springer Proceedings in Materials
Year: 2022 | Citations: 0
[13]
I. Mal, N. Jain, and D. P. Samajdar
Bandgap Tailoring of InAsBi for Long Wavelength Infrared Applications Using Density Functional Theory
Tailored Functional Materials. Springer Proceedings in Materials
Year: 2022 | Citations: 0
[12]
I. Mal and D. P. Samajdar
Investigation of the Optoelectronic Properties of InSbNBi with 16-Band k dot p Model
Microelectronics, Circuits and Systems
Year: 2021 | Citations: 0
[11]
I. Mal, A. Hazra, D. P. Samajdar, and T. D. Das
Investigation of Electronic and Optical Properties of GaSbBi/GaAs Type-II Quantum Wells Using 14-Band k· p Hamiltonian
International Workshop on the Physics of Semiconductor and Devices
Year: 2017 | Citations: 2
[10]
I. Mal, A. Hazra, D. P. Samajdar, and T. D. Das
Computation of Electronic and Optical Properties of GaAsNSb with 16 Band k dot p Model
International Workshop on the Physics of Semiconductor and Devices
Year: 2017 | Citations: 2
[9]
A. Basu, A. Saha, J. Das, S. Roy, S. Mitra, I. Mal, and S. K. Sarkar
On the implementation of a digital watermarking based on phase congruency
Proceedings of the 3rd International Conference on Frontiers of Intelligent Computing: Theory and Applications (FICTA) 2014
Year: 2015 | Citations: 6

Conference Publications (8)

[8]
S. Singh, I. Mal, D. P. Samajdar, and K. Dutta
Geometrical Optimization of Gallium Arsenide (GaAs) nanostructure based Solar Cells
Materials Today: Proceedings
Year: 2022 | Citations: 4
[7]
I. Mal, S. Singh, and D. P. Samajdar
Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications
Materials Today: Proceedings
Year: 2022 | Citations: 7
[6]
A. K. Tenwar, S. Singh, I. Mal, and D. P. Samajdar
Anti-reflective nanostructures for Efficiency Improvement of GaAs based Solar Cells
Materials Today: Proceedings
Year: 2022 | Citations: 5
[5]
S. Saurabh, S. Singh, I. Mal, and D. P. Samajdar
A comparative analysis of silicon (Si) and indium phosphide nanostructure based solar cells
Materials Today: Proceedings
Year: 2022 | Citations: 1
[4]
I. Mal and D. P. Samajdar
A Study on the Consequence of Compressive and Tensile Strain on the Electronic Properties of InPNBi using Multi-band k dot p Hamiltonian
Materials Today: Proceedings
Year: 2022 | Citations: 1
[3]
I. Mal and D. P. Samajdar
Origin of direct and indirect bandgap in BX (X= Sb, Bi): A first principle study
Materials Today: Proceedings
Year: 2021 | Citations: 3
[2]
D. Roy, I. Mal, and D. P. Samajdar
Performance Analysis of CdTe Based PV Array Using Parameter Extraction Techniques
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
Year: 2018 | Citations: 0
[1]
I. Mal, D. P. Samajdar, and D. Roy
Hydrostatic Pressure Study of GaAsSbN/GaAs Quantum Well Based Optoelectronic Devices
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
Year: 2018 | Citations: 0